Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design

Ágnes Gubicza, Zs Manrique D, László Pósa, Lambert C J, György Mihály, Miklós Csontos, András Ernő Halbritter

SCIENTIFIC REPORTS 2045-2322
2016

View on: MTMT: 3101290 | DOI: 10.1038/srep30775 | WoS: 000380889700001 | Scopus: 84982850757 | PubMed: 27488426