VO2 layers with high resistive switching ratio by atomic layer deposition
Zsófia Baji, László Pósa, György Molnár, Zoltán Szabó, M. Volom, A.K. Surca, G. Drazic, János Volk MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 1369-8001 1873-4081 2023 View on: MTMT: 33836334 | DOI: 10.1016/j.mssp.2023.107483 | REAL: 165696 | WoS: 000989351600001 | Scopus: 85153227978 | Google scholar: 15736857520814474618