INTAKE: Integrated Nanocomposites for Thermal and Kinetic Energy Harvesting

Span

2021-2025

Funding

EU Research and Innovation Staff Exchange – RISE

Role

Research Partner

Local Coordinator

Volk, János

Leader
Summary

INTAKE’s innovation vision aims to achieve a step change towards the
next generation of hybrid energy harvesting nanocomposites, which can be
integrated into lightweight and ultra-strong structural composites at
the nanoscopic level. This would infuse composite laminates with
inherent intelligent functionalities (such as energy harvesting, sensing
and wireless communication), without noticeable alterations or adverse
effects to the macroscopic structural properties.

Development of Nanometer Scale Resistive Switching Memory Devices

Span

2018-2022

Funding

National Research, Development and Innovation Fund (OTKA K 128534)

Role

Research Partner

Local Coordinator

Pósa, László

Leader
Summary

In this project we wish to develop, characterize and optimize novel ReRAM units. As a common approach of our studies we first engineer an initial on-chip structure fabricated by electron beam lithography, which is then further reduced in dimension by a controlled electrical breakdown process of the metallic terminals. The resistive switching is confined to the tiny volume of the substrate material residing under the resulting 1-3nm wide nanogap of the leads. This approach allows the study of ultrasmall ReRAM units well below the resolution of present lithographic techniques, which can also be integrated to larger circuits. In our studies graphene is considered as a distinguished material, providing a well shapeable, atomically thin, optically transparent and mechanically flexible contacting platform.

Investigation of atomic or molecular processes induced by ultrashort laser and/or electron pulses

Span

2018-2022

Funding

National Research, Development and Innovation Office, 2018-1.2.1-NKP-2018-00010

Role

Research Partner

Local Coordinator

Battistig, Gábor

Leader
Summary

The collaboration of the three institutions of complementary competencies develops a new tool able to study atomic and molecular processes triggered by the combined action of photons and electrons. The ultra-short pulses of electron needed for the processes will be produced by terahertz radiation. The new scientific tool is planned to setup and operate at ELI-ALP.

The task of MFA in the projectis is the fabrication of micro- and nano-sized structures and devices in which the electromagnetic field of terahertz radiation can accelerate electron packets with great efficiency. For the production and processing of semiconductor and dielectric structures in the required micrometer size range, only the MFA Microtechnology Laboratories provide the appropriate technology and expertise.

Principle of electron acceleration by electromagnetic field of THz radiation.

The planned setup: THz illumination of the dielectric microstructure (inset) trough the waveguides. The electromagnetic field on the structure accelerates the electron packets flying through the microstructure.

KoFAH: Advanced Functional Materials for Autonomous Sensor Networks

Span

2017-2020

Role

Leader

Project Leader

Volk, János

Funding

National Research, Development and Innovation Fund of the Hungarian Government (KoFAH, NVKP_16-1-2016-0018)

Partners
Subcontractors
Summary

The aim of the KoFAH research project is to solve energy issues of Wireless Sensor Networks using advanced energy harvesting materials, low-power MEMS/NEMS devices, smart energy management, and highly efficient communication protocols. In the framework of  the KoFAH program we target to upgrade our available systems and initiate the development of novel autonomous sensors.

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HunQuTech: National Quantum Technology Program

Span

2017-2021

Funding

National Research, Development and Innovation Fund

Role

Research Partner (Nano circuit fabrication)

Local Coordinator

Volk, János

Partners
Summary

The National Research, Development and Innovation Office (NKFIH) facilitates the social and economic utilisation of discovery research findings by defining strategic areas where Hungary has the sufficient level of scientific excellence for the implementation of tasks, so that such goals can be reached faster and more efficiently. With this aim, the Office has announced the “National Quantum Technology Programme”, a funding source for consortia of research and knowledge-dissemination organisations and businesses involving research activities addressing large-scale interdisciplinary scientific and technological challenges which, due to their comprehensive nature and volume, are implemented in long-term cooperation between scientific, industrial and social stakeholders and decision-makers.

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Deposition of ZnO and Ga2O3 nanostructures with atomic layer deposition

Span

2015-2020

Funding

National Research, Development and Innovation Fund (OTKA PD 116579)

Role

Leader

Project Leader

Baji, Zsófia

Summary

The project focuses on the deposition of ZnO and Ga2O3 thin films by ALD, their characterisation, and use in nanostructure fabrication.

ZnO is a wide band-gap semiconductor attracting considerable interest in the past few years due to its versatility in sensorics, optoelectronics, for transparent electrodes and thin film transistors. ZnO is commonly deposited by ALD, the process is well-established and -utilised in a number of applications. ZnO can easily be doped and alloyed by ALD as well, the most commonly used dopant being aluminum, although it has proven to be a less than perfect dopant. On the other hand the Ga doping of ZnO is a lot more promising, as it induces very high carrier concentrations, while leaving the crystallinity unaffected.

Gallium-oxide itself can not only be used as a dopant for ZnO, but is also a highly promising material in photocatalysis and sensorics. The atomic layer deposition method for Ga2O3 fabrication is fairly novel, therefore there are still a number of open questions about the technique itself, such as the use of the appropriate precursor, the deposition parameters, and the properties of the resulting layers.

Ga doped ZnO deposited with ALD

Ga2O3 thin film deposited with ALD and annealed at 900°C

PiezoMat: Ultra-high Resolution Pressure Sensing Uses Matrices of Vertical Piezoelectric Nanowire to Reconstruct the Smallest Features of Human Fingerprints

Span

2013-2017

Funding

European Commission in the Seventh Framework Program (FP7, No 611019)

Role

Research Partner

Local Coordinator

Volk, János

Summary

PiezoMAT proposes a new technology of high-resolution fingerprint sensors based on a matrix of interconnected piezoelectric nanowires (NWs). The long term objective of PiezoMAT is to offer high performance fingerprint sensors with minimal volume occupation for integration into built-in systems able to compete on the market with the best existing products. PiezoMAT proceeds by local deformation of an array of individually contacted piezoelectric NWs and reconstruction from generated potentials, whose amplitudes are proportional to the NW displacement.

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