The project focuses on the deposition of ZnO and Ga2O3 thin films by ALD, their characterisation, and use in nanostructure fabrication.
ZnO is a wide band-gap semiconductor attracting considerable interest in the past few years due to its versatility in sensorics, optoelectronics, for transparent electrodes and thin film transistors. ZnO is commonly deposited by ALD, the process is well-established and -utilised in a number of applications. ZnO can easily be doped and alloyed by ALD as well, the most commonly used dopant being aluminum, although it has proven to be a less than perfect dopant. On the other hand the Ga doping of ZnO is a lot more promising, as it induces very high carrier concentrations, while leaving the crystallinity unaffected.
Gallium-oxide itself can not only be used as a dopant for ZnO, but is also a highly promising material in photocatalysis and sensorics. The atomic layer deposition method for Ga2O3 fabrication is fairly novel, therefore there are still a number of open questions about the technique itself, such as the use of the appropriate precursor, the deposition parameters, and the properties of the resulting layers.