Presentation of László Pósa and Tímea Török on the 16th International Conference on Nanostructrured Materials (NANO) in Sevilla, Spain

2022-07-14T10:39:08+02:00June 10th, 2022|

Pósa L.: Tunable stochasticity in SiOx phase change memory devices; Török T.: Quantum Transport Phenomena in Transition Metal Oxide Memristors; NANO 2022

3rd Prize on TDK

2021-11-23T15:00:02+02:00November 23rd, 2021|

Our TDK student, Péter Hornung received 3rd Prize on the Annual Scientific Student Associations' Conference at BME (TDK) Title: Optimization of termoelectric acceleration sensor operating conditions Supervisor:  Dr. Szabolcs Berezvai, Dr. János Volk Section: Applied Mechanics Paper: Congratulations.

Z. Baji et al: Atomic layer deposition and characterization of Zn-doped Ga2O3 films

2021-11-23T15:30:15+02:00July 23rd, 2021|

The present work focuses on the atomic layer deposition (ALD), annealing, and Zn doping of gallium oxide (Ga2O3) films using a novel Ga precursor, hexakis-dimethylamino-digallium. As ALD deposited Ga2O3 films are always amorphous, the optimal annealing procedure had to be found to achieve crystalline beta -Ga2O3. The bandgaps and dielectric properties of the layers were measured and the effects of the deposition parameters and postdeposition annealing on the electrical properties were determined. The effects of Zn doping on the electrical properties were analyzed, and some crucial issues for application as a UV sensor were addressed. View on: MTMT: 32055088 | DOI: 10.1116/6.0000838 | WoS: [...]

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