Effect of process parameters on co-sputtered Al(1-x)ScxN layer’s properties: Morphology, crystal structure, strain, band gap, and piezoelectricity
Khánh Nguyen Quoc, Zsolt Endre Horváth, Zsolt Zolnai, Péter Petrik, László Pósa, János Volk MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 1369-8001 1873-4081 2024 View on: MTMT: 34196964 | DOI: 10.1016/j.mssp.2023.107902 | REAL: 176780 | WoS: 001101687300001 | Scopus: 85173804404 | Google scholar: 13041641592628243219