The present work focuses on the atomic layer deposition (ALD), annealing, and Zn doping of gallium oxide (Ga2O3) films using a novel Ga precursor, hexakis-dimethylamino-digallium. As ALD deposited Ga2O3 films are always amorphous, the optimal annealing procedure had to be found to achieve crystalline beta -Ga2O3. The bandgaps and dielectric properties of the layers were measured and the effects of the deposition parameters and postdeposition annealing on the electrical properties were determined. The effects of Zn doping on the electrical properties were analyzed, and some crucial issues for application as a UV sensor were addressed.
View on: MTMT: 32055088 | DOI: 10.1116/6.0000838 | WoS: 000636333500001 | REAL: 126346 | Scopus: 85103448969 | Google scholar: 10758024037167988301