Demonstration of Dozinet mobile gamma detector system at 3RD Including Annual Workshop And 4TH Joint Action
https://including-cluster.eu/news-post.php?id=49
Presentation of László Pósa and Tímea Török on the 16th International Conference on Nanostructrured Materials (NANO) in Sevilla, Spain
Pósa L.: Tunable stochasticity in SiOx phase change memory devices; Török T.: Quantum Transport Phenomena in Transition Metal Oxide Memristors; NANO 2022
T. N. Török et al: Tunable, Nucleation-Driven Stochasticity in Nanoscale Silicon Oxide Resistive Switching Memory Devices
doi.org/10.1021/acsanm.2c00722
Farewell party of János Radó
We thank the splendid work at MFA and wish you a successful position in Canada!
Experimental investigation of rheological properties and thermal conductivity of SiO2–P25 TiO2 hybrid nanofluids
Thong Le Ba, Zalán István Várady, István Endre Lukács, János Molnár, Ida Anna Soósné Balczár, Somchai Wongwises, Imre Miklós Szilágyi JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY 1388-6150 1572-8943 1588-2926 2021 View on: MTMT: 31385128 | DOI: 10.1007/s10973-020-10022-4 | WoS: 000551020600002 | REAL: 135819 | Scopus: 85088287692 | Scopus: 85113231153 | Egyéb URL: http://link.springer.com/10.1007/s10973-020-10022-4 | Google scholar: 9112378346975624916
MFA Postdoctorate Price to László Pósa
for his outstanding achievements in the field of memristive switches. Congratulations.
MFA Research Support price to Erika Tunyogi
for her outstanding achievements in the field of embedded systems. Congratulations.
3rd Prize on TDK
Our TDK student, Péter Hornung received 3rd Prize on the Annual Scientific Student Associations' Conference at BME (TDK) Title: Optimization of termoelectric acceleration sensor operating conditions Supervisor: Dr. Szabolcs Berezvai, Dr. János Volk Section: Applied Mechanics Paper: https://tdk.bme.hu/GPK/AKM24/Autonom-termoelektromos-gyorsulasmero-szenzor Congratulations.
Z. Baji et al: Atomic layer deposition and characterization of Zn-doped Ga2O3 films
The present work focuses on the atomic layer deposition (ALD), annealing, and Zn doping of gallium oxide (Ga2O3) films using a novel Ga precursor, hexakis-dimethylamino-digallium. As ALD deposited Ga2O3 films are always amorphous, the optimal annealing procedure had to be found to achieve crystalline beta -Ga2O3. The bandgaps and dielectric properties of the layers were measured and the effects of the deposition parameters and postdeposition annealing on the electrical properties were determined. The effects of Zn doping on the electrical properties were analyzed, and some crucial issues for application as a UV sensor were addressed. View on: MTMT: 32055088 | DOI: 10.1116/6.0000838 | WoS: [...]